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                                   PMEG3020EH_EJ_4 ? NXP B.V. 2010. All rights reserved. Product data sheet Rev. 04 — 4 February 2010 3 of 9 NXP Semiconductors PMEG3020EH; PMEG3020EJ 30 V, 2 A ultra low VF MEGA Schottky barrier rectifiers 5. Limiting values [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1cm2. 6. Thermal characteristics [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] For Schottky barrier diodes thermal run-away has to be considered, as in some applications the reverse power losses PR are a significant part of the total power losses. Nomograms for determining the reverse power losses PR and I F(AV) rating will be av ailable on request. [3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1cm2. Table 6. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VR reverse voltage - 30 V IF forward current Tsp ≤ 55 °C-2A IFRM repetitive peak forward current tp ≤ 1 ms; δ≤0.25 - 4.5 A IFSM non-repetitive peak forward t = 8 ms; square current wave [1] -9A Ptot total power dissipation Tamb ≤ 25 °C PMEG3020EH [1] - 375 mW [2] - 830 mW PMEG3020EJ [1] - 360 mW [2] - 830 mW Tj junction temperature - 150 °C Tamb ambient temperature ?65 +150 °C Tstg storage temperature ?65 +150 °C Table 7. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-a) thermal resistance from junction to ambient in free air PMEG3020EH [1][2] --330K/W [2][3] --150K/W PMEG3020EJ [1][2] --350K/W [2][3] --150K/W Rth(j-sp) thermal resistance from junction to solder point PMEG3020EH - - 60 K/W PMEG3020EJ - - 55 K/W |